상세보기
하민우
- 소속 전기전자공학부 전기공학전공
- 직위(직급) 교수
- 전화번호 031-330-6359
- 이메일 isobar@mju.ac.kr
기본정보
| 연구실위치 | 제3공학관 332호 | 연구실전화 | 031-330-6359 |
|---|---|---|---|
| 연구분야 | 차세대 전력용 반도체 소자 연구실(전기재료분야) | ||
자기소개
연구분야: Multilayer Ceramic Layer Capacitor, Compound Power Semiconductor
학력
2013. 2. - 2014. 2.
Research Scientist, The University of Texas at Dallas, TX, USA
2001. 3. - 2007. 2
Ph.D., School of Electrical Engineering,
Seoul National University, Republic of Korea
1997. 3. - 2001. 2.
B.S., School of Electrical Engineering,
Korea Advanced Institute of Science and Technology, Republic of Korea
Research Scientist, The University of Texas at Dallas, TX, USA
2001. 3. - 2007. 2
Ph.D., School of Electrical Engineering,
Seoul National University, Republic of Korea
1997. 3. - 2001. 2.
B.S., School of Electrical Engineering,
Korea Advanced Institute of Science and Technology, Republic of Korea
주요 경력 및 활동
2009. 6. - 2013. 2.
Senior Engineer,
Korea Electronics Technology Institute, Republic of Korea
2007. 3. - 2009. 5.
Senior Engineer, Next-Generation Display Driver IC Design,
System LSI Division, Samsung Electronics, Republic of Korea
Senior Engineer,
Korea Electronics Technology Institute, Republic of Korea
2007. 3. - 2009. 5.
Senior Engineer, Next-Generation Display Driver IC Design,
System LSI Division, Samsung Electronics, Republic of Korea
수상경력
1. 제1회 페어차일드코리아반도체 논문공모전 금상, 2006
2. 한국물리학회 2011년 봄학술논문발표회 우수발표상
3. ICAE 2011 Outstanding Paper
4. 2012년도 대한전기학회 제43회 하계학술대회 우수논문상
5. 2015년도 대한전기학회 하계학술대회 논문상
6. 25회 한국반도체학술대회 우수포스터상, 2018
7. 2018년 한국전기전자재료학회 추계학술대회 우수논문상
8. 2019년 대한전기학회 추계학술대회 우수논문상
9. 전기하계우수논문상 한국전기연구원장상, 2021
10. 명지대학교 학술상, 2022
11. 이덕출 학술상, 대한전기학회, 2022
12. 한국세라믹학회 우수 포스터상, 2022
2. 한국물리학회 2011년 봄학술논문발표회 우수발표상
3. ICAE 2011 Outstanding Paper
4. 2012년도 대한전기학회 제43회 하계학술대회 우수논문상
5. 2015년도 대한전기학회 하계학술대회 논문상
6. 25회 한국반도체학술대회 우수포스터상, 2018
7. 2018년 한국전기전자재료학회 추계학술대회 우수논문상
8. 2019년 대한전기학회 추계학술대회 우수논문상
9. 전기하계우수논문상 한국전기연구원장상, 2021
10. 명지대학교 학술상, 2022
11. 이덕출 학술상, 대한전기학회, 2022
12. 한국세라믹학회 우수 포스터상, 2022
학회활동
2017. 2 - Now, Associate Editor, Journal of Electrical Engineering & Technology(SCIE)
논문 및 저서
01. Min-Woo Ha, Byung-Chul Jeon, Min-Koo Han, Yearn-Ik Choi, “ESD Degradation Analysis of Poly-Si N-type TFTs by Employing a Transmission Line Pulser Test’’, Journal of the Korean Physical Society, Vol. 44, No. 1, p. 172-176, Jan. 2004
02. Byung-Chul Jeon, In-hwan Ji, Min-Woo Ha, Min-Koo Han, and Yearn-Ik Choi, “A New Voltage between Collector and Emitter (VCE) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor”, Japanese Journal of Applied Physics, Vol. 43, No. 4B, p. 1677-1679, April 2004
03. Soo-Seong Kim, Min-Woo Ha, Yearn-Ik Choi, and Min-Koo Han, “Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch”, Japanese Journal of Applied Physics, Vol. 43, No. 4B, p. 1752-1755, April 2004
04. Jae-Keun Oh, Min-Woo Ha, Byung-Chul Jeon, Yearn-Ik Choi, and Min-Koo Han, “A New Conductivity Modulated LDMOSFET Employing Buried P Region and P+ Drain”, Japanese Journal of Applied Physics, Vol. 43, No. 10, p. 6917-6919, Oct. 2004
05. Min-Woo Ha, Jae-Keun Oh, Soo-Seong Kim, Min-Koo Han, and Yearn-Ik Choi, “The Novel Junction Termination Method Employing Shallow Trench’’, Physica Scripta, Vol. T114, p. 120-122, 2004
06. Min-Woo Ha, Seung-Chul Lee, Jin-Cherl Her, Kwang-Seok Seo, and Min-Koo Han, “AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications”, Japanese Journal of Applied Physics, Vol. 44, No. 9A, p. 6385-6388, Sep. 2005
07. Min-Woo Ha, Seung-Chul Lee, Jin-Cherl Her, Kwang-Seok Seo, and Min-Koo Han, “Annealing Effects on AlGaN/GaN HEMTs Employing Excimer Laser Pulses”, Electrochemical and Solid-State Letters, Vol. 8, No. 12, p. G352-G354, Dec. 2005
08. Min-Woo Ha, Seung-Chul Lee, Young-Hwan Choi, In-Hwan Ji, and Min-Koo Han, “An Improved Junction Termination Design Employing Shallow Trenches and Field Limiting Rings for Power Devices”, Japanese Journal of Applied Physics, Vol. 45, No. 2A, p. 626-629, Feb. 2006
09. Min-Woo Ha, Seung-Chul Lee, Jin-Cherl Her, Kwang-Seok Seo, and Min-Koo Han, “New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors”, Japanese Journal of Applied Physics, Vol. 45, No. 4B, p. 3391-3394, April 2006
10. Seung-Chul Lee, Min-Woo Ha, Ji-Yong Lim, Jin-Cherl Her, Kwang-Seok Seo, and Min-Koo Han, “Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation”, Japanese Journal of Applied Physics, Vol. 45, No. 4B, p. 3398-3400, April 2006
11. In-Hwan Ji, Young-Hwan Choi, Min-Woo Ha, Min-Koo Han, and Yearn-Ik Choi, “Experimental study on short-circuit characteristics of the new protection circuit of insulated gate bipolar transistor”, Physica Scripta, Vol. T126, p. 50-52, Aug. 2006
12. Seung-Chul Lee, Min-Woo Ha, Jin-Cherl Her, Jiyong Lim, Kwang-Seok Seo, and Min-Koo Han, “An AlGaN/GaN HEMT power switch employing a field plate and a floating gate”, Physica Scripta, Vol. T126, p. 65-67, 2006
13. Min-Woo Ha, Young-Hwan Choi, Joong-Hyun Park, Kwang-Seok Seo, and Min-Koo Han, “Hot Carrier Stress Effects of SiO2 Passivated AlGaN/GaN High Electron Mobility Transistors”, ECS Transactions, Vol. 3, No. 5, p. 213-220, 2006
14. In-Hwan Ji, Byung-Chul Jeon, Young-Hwan Choi, Min-Woo Ha, and Min-Koo Han, “A New 600 V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection”, Japanese Journal of Applied Physics, Vol. 45, No. 10A, p. 7587-7591, Oct. 2006
15. Min-Woo Ha, Seung-Chul Lee, Soo-Seong Kim, Chong-Man Yun, and Min-Koo Han, “Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT”, Superlattices and Microstructures, Vol. 40, No. 4-6, p. 562-566, Oct.-Dec. 2006
16. Min-Woo Ha, Seung-Chul Lee, Young-Hwan Choi, Soo-Seong Kim, Chong-Man Yun, and Min-Koo Han, “New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure”, Supperlattices and Microstructures, Vol. 40, No. 4-6, p. 567-573, Oct.-Dec. 2006
17. In-Hwan Ji, Young-Hwan Choi, Min-Woo Ha, and Min-Koo Han, “A New Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor and Lateral Diode Employing the Separated Schottky Anode for a Power Integrated Circuit”, Japanese Journal of Applied Physics, Vol. 46, No. 4B, p. 2041-2045, April 2007
18. Min-Woo Ha, Young-Hwan Choi, Jiyong Lim, and Min-Koo Han, “SiO2 Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate”, Japanese Journal of Applied Physics, Vol. 46, No. 4B, p. 2291-2295, April 2007
19. Young-Hwan Choi, Min-Woo Ha, Jiyong Lim, and Min-Koo Han, “New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors”, Japanese Journal of Applied Physics, Vol. 46, No. 4B, p. 2287-2290, April 2007
20. In-Hwan Ji, Min-Woo Ha, Young-Hwan Choi, Seung-Chul Lee, Chong-Man Yun, and Min-Koo Han, “A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor”, Microelectronics Journal, Vol. 38, No. 6, p. 908-913, June 2008
21. Ji Ha Kim, Hong Goo Choi, Min-Woo Ha, Hong Joo Song, Cheong Hyun Roh, Jun Ho Lee, Jung Ho Park, and Cheol-Koo Hahn, “Effects of Nitride-Based Plasma Pretreatment Prior to SiNx Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates”, Japanese Journal of Applied Physics, Vol. 49, No. 4, p. 04DF05, April 2010
22. Min-Woo Ha, Cheong Hyun Roh, Dae Won Hwang, Hong Goo Choi, Hong Joo Song, Jun Ho Lee, Jung Ho Park, Ogyun Seok, Jiyong Lim, Min-Koo Han, and Cheol-Koo Hahn, “High-Voltage Schottky Barrier Diode on Silicon Substrate”, Japanese Journal of Applied Physics, Vol. 50, No. 6, p. 06GF17, June, 2011
23. Hong Joo Song, Cheong Hyun Roh, Hong Goo Choi, Min-Woo Ha, Cheol-Koo Hahn, Jung Ho Park, and Jun Ho Lee, “Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs”, Applied Surface Science, Vol. 257, No. 18 , p. 8102-8105, July 2011
24. Ho Jun Nam, Hong Goo Choi, Min-Woo Ha, Hong Joo Song, Cheong Hyun Roh, Jun Ho Lee, Cheol-Koo Hahn, and Jung Ho Park, “Suppression of Leakage Currents in AlGaN/GaN HEMTs by Optimizing the Thermal Ramping Rate during the Ohmic RTP process’’, Journal of the Korean Physical Society, Vol. 59, No. 2, p. 439-442, Aug. 2011
25. Ogyun Seok, Young-Shil Kim, Min-Woo Ha, and Min-Koo Han, “Effects of SiO2 Passivation on Oxygen Annealed AlGaN/GaN HEMTs”, ECS Transactions, Vol. 35, No. 6, p. 185-190, 2011
26. Min-Woo Ha, Dae Won Hwang, Cheol-Koo Hahn, and Young-Shil Kim, “1-kV AlGaN/GaN Schottky Barrier Diode on a Si Substrate by Oxidizing the Schottky Contact’’, Journal of the Korean Physical Society, Vol. 60, No. 10, p. 1629-1631, May 2012
27. Min-Woo Ha, Jun Ho Lee, Min-Koo Han, and Cheol-Koo Hahn, “Effects of metal spikes on leakage current of high-voltage GaN Schottky barrier diode”, Solid-State Electronics, Vol. 73, p. 1-6, July 2012
28. Young Shil Kim, Min Woo Ha, Min Ki Kim, and Min Koo Han, “AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact”, Japanese Journal of Applied Physics, Vol. 51, No. 9, p. 09MC01, Sep. 2012
29. Ogyun Seok, Woojin Ahn, Min-Koo Han, and Min-Woo Ha, “New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al2O3/Ga2O3 Stacks”, Japanese Journal of Applied Physics, Vol. 51, No. 10, p. 101001, Oct. 2012
30. Minki Kim, Ogyun Seok, Min-Koo Han, and Min-Woo Ha, “AlGaN/GaN High-Electron-Mobility Transistor Using a Trench Structure for High-Voltage Switching Applications”, Applied Physics Research, Vol. 4, No. 4, p. 1-7, Nov. 2012
31. Ogyun Seok, Woojin Ahn, Min-Koo Han, and Min-Woo Ha, “Effect of Ga2O3 sputtering power on breakdown voltage of AlGaN/GaN high-electron-mobility transistors”, Journal of Vacuum Science and Technology B, Vol. 31, No. 1, p. 011203, Jan., 2013
32. Ogyun Seok, Woojin Ahn, Min-Koo Han, and Min-Woo Ha, “High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators”, Semiconductor Science and Technology, Vol. 28, No. 2, p. 025001, Feb., 2013
33. Min-Woo Ha, Min-Koo Han, and Cheol-Koo Hahn, “Effects of post oxidation on leakage current of high-voltage AlGaN/GaN Schottky barrier diodes on Si(111) substrate”, Solid-State Electronics, Vol. 81, p. 1-4, March, 2013
34. O. Seok, W. Ahn, M.-K. Han, and M.-W. Ha, “High-breakdown voltage and low on-resistance AlGaN/GaN on Si MOS-HEMTs employing an extended TaN gate on HfO2 gate insulator”, Electronics Letters, Vol. 49, No. 6, p. 425-427, March, 2013
35. Woojin Ahn, Ogyun Seok, Min-Woo Ha, Young-Shil Kim, and Min-Koo Han, “Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)”, ECS Transactions, Vol. 53, No. 2, p. 171-176, 2013
36. M.-W. Ha, O. Seok, W. Ahn, and M.-K. Han, “Surface Degradation of GaN after Thermal Processes”, ECS Transactions, Vol. 53, No. 2, p. 185-190, 2013
37. Ogyun Seok, Woojin Ahn, Min-Woo Ha, and Min-Koo Han, “RF-sputtered HfO2 Gate Insulator in High-Performance AlGaN/GaN MOS-HEMTs”, ECS Transactions, Vol. 53, No. 2, p. 191-196, 2013
38. S. Jandhyala, G. Mordi, D. Mao, M.-W. Ha, M. A. Quevedo-Lopez, B. E. Gnade, and J. Kim, “Graphene-ferroelectric hybrid devices for multi-valued memory system”, Applied Physics Letters, Vol. 103, p. 022903, July, 2013
39. Woojin Ahn, Ogyun Seok, Seung Min Song, Min-Koo Han, and Min-Woo Ha, “High-performance AlGaN/GaN high-electron-mobility transistors employing H2O annealing”, Journal of Crystal Growth, Vol. 378, p. 600-603, Sep., 2013
40. Minki Kim, Ogyun Seok, Min-Koo Han, and Min-Woo Ha, “High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiOx Passivation”, Journal of Electrical Engineering & Technology, Vol. 8, No. 5, p. 1157-1162, Sep., 2013
41. A. Y. Polyakov, N. B. Smirnov, Min-Woo Ha, Cheol-Koo Hahn, E. A. Kozhukhova, A. V. Govorkov, R. V. Ryzhuk, N. I. Kargin, Han-Su Cho, and In-Hwan Lee, “Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si”, Journal of Alloys and Compounds, Vol. 575, p. 17-23, Oct., 2013
42. Saungeun Park, Sangchul Lee, Greg Mordi, Srikar Jandhyla, Min-Woo Ha, Jang-Sik Lee, Luigi Colombo, Robert M. Wallace, Byoung Hun Lee, and Jiyoung Kim, “Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors”, IEEE Electron Device Letters, Vol. 35, No. 2, p. 277-279, Feb., 2014
43. Ogyun Seok, Min-Koo Han, Young-Chul Byun, Jiyoung Kim, Hyun-Chang Shin, and Min-Woo Ha, “High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment”, Solid-State Electronics, Vol. 103, p. 49-53, Jan., 2015
44. Ogyun Seok and Min-Woo Ha, “AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator”, Solid-State Electronics, Vol. 105, p. 1-5, March, 2015
45. Jie Huang, Antonio T. Lucero, Lanxia Cheng, Hyeon Jun Hwang, Min-Woo Ha, and Jiyoung Kim, “Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition”, Applied Physics Letters, Vol. 106, p. 123101, March, 2015
46. Min-Woo Ha, Kangmin Choi, Yoo Jin Jo, Hyun Soo Jin, and Tae Joo Park, “Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts”, Journal of Semiconductor Technology and Science, Vol. 16, No. 2, p. 179-184, April, 2016
47. Mingun Lee, Dongkyu Cha, Jie Huang, Min-Woo Ha, and Jiyoung Kim, “Fabrication of Single TiO2 Nanotube Devices With Pt Interconnections Using Electron and Ion Beam-assisted Deposition”, Japanese Journal of Applied Physics, Vol. 55, No. 6S1, p. 06GG11, June, 2016
48. Jie Huang, Mingun Lee, Antonio Lucero, Lanxia Cheng, Min-Woo Ha, and Jiyoung Kim, “7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO Thin Film Transistors”, Japanese Journal of Applied Physics, Vol. 55, No. 6S1, p. 06GK04, June, 2016
49. Yoo Jin Jo, Jeong Hyun Moon, Ogyun Seok, Wook Bahng, Tae Joo Park, and Min-Woo Ha, “Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2”, Journal of Semiconductor Technology and Science, Vol. 17, No. 2, p. 265-270, April, 2017
50. Dong-Won Kang, Hae Nyung Chang, and Min-Woo Ha, “Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage”, Japanese Journal of Applied Physics, Vol. 56, No. 6S1, p. 06GE09, June, 2017
51. Saemon Yoon, Min-Woo Ha, and Dong-Won Kang, “PCBM-blended chlorobenzene hybrid anti-solvent engineering for efficient planar perovskite solar cells”, Journal of Materials Chemistry C, Vol. 5, p. 10143-10151, No. 40, Oct., 2017
52. Suhyeong Lee, Yong Seok Kim, Hong Jeon Kang, Hyunwoo Kim, Min-Woo Ha, and Hyeong Joon Kim, “Effects of post-deposition annealing on sputtered SiO2/4H-SiC metal-oxide-semiconductor”, Solid-State Electronics, Vol. 139, p. 115-120, Jan., 2018
53. Ogyun Seok, Min-Woo Ha, In Ho Kang, Hyoung Woo Kim, Dong Young Kim, and Wook Bahng, “Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection well”, Japanese Journal of Applied Physics, Vol. 57, No. 6S1, p. 06HC07, June, 2018
54. Suhyeong Lee, Ji Min Kim, Changhyun Kim, Hyunwoo Kim, Hong Jeon Kang, Min-Woo Ha, and Hyeong Joon Kim, “Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing”, Ceramics International, Vol. 44, No. 12, p. 13565-13571, Aug. 2018
55. Xin Meng, Jaebeom Lee, Arul Ravichandran, Young-Chul Byun, Jae-Gil Lee, Antonio T. Lucero, Si Joon Kim, Min-Woo Ha, Chadwin D. Young, and Jiyoung Kim, “Robust SiNx/GaN MIS-HEMTs with crystalline interfacial layer using hollow cathode PEALD”, IEEE Electron Device Letters, Vol. 39, No. 8, p. 1195-1198, Aug. 2018
56. Yoo Jin Jo, Hyun Soo Jin, Min-Woo Ha, and Tae Joo Park, “Sulfur incorporation at interface between atomic-layer-deposited Al2O3 thin film and AlGaN/GaN heterostructure”, Electronic Materials Letters, Vol. 15, No. 2, p. 179-185, March 2019
57. Suhyeong Lee, Sungmin Kim, Hong Jeon Kang, Hyun Woo Kim, Ogyun Seok, Jeong Hyun Moon, Wook Bahng, Hyeong Joon Kim, and Min-Woo Ha, “Effect of sweeping direction on the capacitance-voltage behavior of sputtered SiO2/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing”, Physica Scripta, Vol. 94, No. 12, p. 125811, Dec. 2019
58. Ogyun Seok, Hyoung Woo Kim, In Ho Kang, Min-Woo Ha, and Wook Bahng, “Effects of junction profiles in bottom protection p-well on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs”, The European Physical Journal Applied Physics, Vol. 88, No. 3, p. 30103, Dec. 2019
59. Hojun Lee, Ogyun Seok, Taeeun Kim, and Min-Woo Ha, “Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications”, Electronics, Vol. 9, No. 2, p. 332, Feb. 2020
60. Byung-Gwan Lee, Seung-Il Shin, Min-Woo Ha, Geon-Hyoung An, “Sensible design of open-porous spherical architectures for hybrid supercapacitors with improved high-rate capability”, Current Applied Physics, Vol. 20, No. 3, p. 419-424, March 2020
61. Ogyun Seok, In Ho Kang, Jeong Hyun Moon, Hyoung Woo Kim, Min-Woo Ha, Wook Bahng, “Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide”, Microelectronic Engineering, Vol. 225, p. 111280, March 2020
62. Min-Woo Ha, Ogyun Seok, Hojun Lee, and Hyun Ho Lee, “Mobility models based on forward current-voltage characteristics of p-type pseudo-vertical diamond Schottky barrier diodes”, Micromachines, Vol. 11, No. 6, p. 598, June 2020
63. Kyoungmin Woo, Wonkyu Kang, Kyungmin Lee, Pilwoo Lee, Yoonjae Kim, Tae-Sik Yoon, Chu-Young Cho, Kyung-Ho Park, Min-Woo Ha, Hyun Ho Lee, “Enhancement of cortisol measurement sensitivity by laser illumination for AlGaN/GaN transistor biosensor”, Biosensors and Bioelectronics, Vol. 159, p. 112186, July 2020
64. Jeong Hyun Moon, In Ho Kang, Hyoung Woo Kim, Ogyun Seok, Wook Bahng, and Min-Woo Ha, “TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H-SiC MOSFETs using nitric oxide post-deposition annealing”, Current Applied Physics, Vol. 20, No. 12, p. 1386-1390, Dec. 2020
65. You-Cheol Jang, Soo-Seong Kim, Min-Woo Ha, and Yong-Sang Kim, “Accelerated Degradation of IGBTs due to High Gate Voltage at Various Temperature Environments”, IEEE Transactions on Devices and Materials Reliability, Vol. 20, No. 4, p. 731-736, Dec. 2020
66. Min-Woo Ha and Ogyun Seok, “Multi-floating-zone JTE for 4.5 kV SiC power devices with exponentially modulated dimensions”, Japanese Journal of Applied Physics, Vol. 60, No. SC, p. SCCE01, 2021
67. Ogyun Seok and Min-Woo Ha, “Effects of incomplete ionization on forward current-voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation”, Japanese Journal of Applied Physics, Vol. 60, No. SC, p. SCCE08, 2021
68. Yeongeun Park, Hyowon Yoon, Chaeyun Kim, Gwangjae Kim, Gyuheok Kang, Oygun Seok, and Min-Woo Ha, “Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide”, Japanese Journal of Applied Physics, Vol. 62, No. 1, p. 011001, 2023
69. Hyowon Yoon, Jinhun Kim, Sangyeob Kim, Chaeyun Kim, Yeongeun Park, Soontak Kwon, Jaejin Song, Jeongyun Lee, Min-Woo Ha, and Ogyun Seok, “1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect”, Japanese Journal of Applied Physics, Vol. 62, No. 11, p. 114001, 2023
70. Taeeun Kim, Min Kee, Jung-Rag Yoon, Ogyun Seok, and Min-Woo Ha, “DC Electric field-induced aging effects of electrical characteristics on X7R multilayer ceramic capacitors for switching mode power supplies”, Vol. 20, No. 2, pp. 1103-1111, 2025
02. Byung-Chul Jeon, In-hwan Ji, Min-Woo Ha, Min-Koo Han, and Yearn-Ik Choi, “A New Voltage between Collector and Emitter (VCE) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor”, Japanese Journal of Applied Physics, Vol. 43, No. 4B, p. 1677-1679, April 2004
03. Soo-Seong Kim, Min-Woo Ha, Yearn-Ik Choi, and Min-Koo Han, “Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch”, Japanese Journal of Applied Physics, Vol. 43, No. 4B, p. 1752-1755, April 2004
04. Jae-Keun Oh, Min-Woo Ha, Byung-Chul Jeon, Yearn-Ik Choi, and Min-Koo Han, “A New Conductivity Modulated LDMOSFET Employing Buried P Region and P+ Drain”, Japanese Journal of Applied Physics, Vol. 43, No. 10, p. 6917-6919, Oct. 2004
05. Min-Woo Ha, Jae-Keun Oh, Soo-Seong Kim, Min-Koo Han, and Yearn-Ik Choi, “The Novel Junction Termination Method Employing Shallow Trench’’, Physica Scripta, Vol. T114, p. 120-122, 2004
06. Min-Woo Ha, Seung-Chul Lee, Jin-Cherl Her, Kwang-Seok Seo, and Min-Koo Han, “AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications”, Japanese Journal of Applied Physics, Vol. 44, No. 9A, p. 6385-6388, Sep. 2005
07. Min-Woo Ha, Seung-Chul Lee, Jin-Cherl Her, Kwang-Seok Seo, and Min-Koo Han, “Annealing Effects on AlGaN/GaN HEMTs Employing Excimer Laser Pulses”, Electrochemical and Solid-State Letters, Vol. 8, No. 12, p. G352-G354, Dec. 2005
08. Min-Woo Ha, Seung-Chul Lee, Young-Hwan Choi, In-Hwan Ji, and Min-Koo Han, “An Improved Junction Termination Design Employing Shallow Trenches and Field Limiting Rings for Power Devices”, Japanese Journal of Applied Physics, Vol. 45, No. 2A, p. 626-629, Feb. 2006
09. Min-Woo Ha, Seung-Chul Lee, Jin-Cherl Her, Kwang-Seok Seo, and Min-Koo Han, “New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors”, Japanese Journal of Applied Physics, Vol. 45, No. 4B, p. 3391-3394, April 2006
10. Seung-Chul Lee, Min-Woo Ha, Ji-Yong Lim, Jin-Cherl Her, Kwang-Seok Seo, and Min-Koo Han, “Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation”, Japanese Journal of Applied Physics, Vol. 45, No. 4B, p. 3398-3400, April 2006
11. In-Hwan Ji, Young-Hwan Choi, Min-Woo Ha, Min-Koo Han, and Yearn-Ik Choi, “Experimental study on short-circuit characteristics of the new protection circuit of insulated gate bipolar transistor”, Physica Scripta, Vol. T126, p. 50-52, Aug. 2006
12. Seung-Chul Lee, Min-Woo Ha, Jin-Cherl Her, Jiyong Lim, Kwang-Seok Seo, and Min-Koo Han, “An AlGaN/GaN HEMT power switch employing a field plate and a floating gate”, Physica Scripta, Vol. T126, p. 65-67, 2006
13. Min-Woo Ha, Young-Hwan Choi, Joong-Hyun Park, Kwang-Seok Seo, and Min-Koo Han, “Hot Carrier Stress Effects of SiO2 Passivated AlGaN/GaN High Electron Mobility Transistors”, ECS Transactions, Vol. 3, No. 5, p. 213-220, 2006
14. In-Hwan Ji, Byung-Chul Jeon, Young-Hwan Choi, Min-Woo Ha, and Min-Koo Han, “A New 600 V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection”, Japanese Journal of Applied Physics, Vol. 45, No. 10A, p. 7587-7591, Oct. 2006
15. Min-Woo Ha, Seung-Chul Lee, Soo-Seong Kim, Chong-Man Yun, and Min-Koo Han, “Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT”, Superlattices and Microstructures, Vol. 40, No. 4-6, p. 562-566, Oct.-Dec. 2006
16. Min-Woo Ha, Seung-Chul Lee, Young-Hwan Choi, Soo-Seong Kim, Chong-Man Yun, and Min-Koo Han, “New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure”, Supperlattices and Microstructures, Vol. 40, No. 4-6, p. 567-573, Oct.-Dec. 2006
17. In-Hwan Ji, Young-Hwan Choi, Min-Woo Ha, and Min-Koo Han, “A New Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor and Lateral Diode Employing the Separated Schottky Anode for a Power Integrated Circuit”, Japanese Journal of Applied Physics, Vol. 46, No. 4B, p. 2041-2045, April 2007
18. Min-Woo Ha, Young-Hwan Choi, Jiyong Lim, and Min-Koo Han, “SiO2 Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate”, Japanese Journal of Applied Physics, Vol. 46, No. 4B, p. 2291-2295, April 2007
19. Young-Hwan Choi, Min-Woo Ha, Jiyong Lim, and Min-Koo Han, “New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors”, Japanese Journal of Applied Physics, Vol. 46, No. 4B, p. 2287-2290, April 2007
20. In-Hwan Ji, Min-Woo Ha, Young-Hwan Choi, Seung-Chul Lee, Chong-Man Yun, and Min-Koo Han, “A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor”, Microelectronics Journal, Vol. 38, No. 6, p. 908-913, June 2008
21. Ji Ha Kim, Hong Goo Choi, Min-Woo Ha, Hong Joo Song, Cheong Hyun Roh, Jun Ho Lee, Jung Ho Park, and Cheol-Koo Hahn, “Effects of Nitride-Based Plasma Pretreatment Prior to SiNx Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates”, Japanese Journal of Applied Physics, Vol. 49, No. 4, p. 04DF05, April 2010
22. Min-Woo Ha, Cheong Hyun Roh, Dae Won Hwang, Hong Goo Choi, Hong Joo Song, Jun Ho Lee, Jung Ho Park, Ogyun Seok, Jiyong Lim, Min-Koo Han, and Cheol-Koo Hahn, “High-Voltage Schottky Barrier Diode on Silicon Substrate”, Japanese Journal of Applied Physics, Vol. 50, No. 6, p. 06GF17, June, 2011
23. Hong Joo Song, Cheong Hyun Roh, Hong Goo Choi, Min-Woo Ha, Cheol-Koo Hahn, Jung Ho Park, and Jun Ho Lee, “Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs”, Applied Surface Science, Vol. 257, No. 18 , p. 8102-8105, July 2011
24. Ho Jun Nam, Hong Goo Choi, Min-Woo Ha, Hong Joo Song, Cheong Hyun Roh, Jun Ho Lee, Cheol-Koo Hahn, and Jung Ho Park, “Suppression of Leakage Currents in AlGaN/GaN HEMTs by Optimizing the Thermal Ramping Rate during the Ohmic RTP process’’, Journal of the Korean Physical Society, Vol. 59, No. 2, p. 439-442, Aug. 2011
25. Ogyun Seok, Young-Shil Kim, Min-Woo Ha, and Min-Koo Han, “Effects of SiO2 Passivation on Oxygen Annealed AlGaN/GaN HEMTs”, ECS Transactions, Vol. 35, No. 6, p. 185-190, 2011
26. Min-Woo Ha, Dae Won Hwang, Cheol-Koo Hahn, and Young-Shil Kim, “1-kV AlGaN/GaN Schottky Barrier Diode on a Si Substrate by Oxidizing the Schottky Contact’’, Journal of the Korean Physical Society, Vol. 60, No. 10, p. 1629-1631, May 2012
27. Min-Woo Ha, Jun Ho Lee, Min-Koo Han, and Cheol-Koo Hahn, “Effects of metal spikes on leakage current of high-voltage GaN Schottky barrier diode”, Solid-State Electronics, Vol. 73, p. 1-6, July 2012
28. Young Shil Kim, Min Woo Ha, Min Ki Kim, and Min Koo Han, “AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact”, Japanese Journal of Applied Physics, Vol. 51, No. 9, p. 09MC01, Sep. 2012
29. Ogyun Seok, Woojin Ahn, Min-Koo Han, and Min-Woo Ha, “New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al2O3/Ga2O3 Stacks”, Japanese Journal of Applied Physics, Vol. 51, No. 10, p. 101001, Oct. 2012
30. Minki Kim, Ogyun Seok, Min-Koo Han, and Min-Woo Ha, “AlGaN/GaN High-Electron-Mobility Transistor Using a Trench Structure for High-Voltage Switching Applications”, Applied Physics Research, Vol. 4, No. 4, p. 1-7, Nov. 2012
31. Ogyun Seok, Woojin Ahn, Min-Koo Han, and Min-Woo Ha, “Effect of Ga2O3 sputtering power on breakdown voltage of AlGaN/GaN high-electron-mobility transistors”, Journal of Vacuum Science and Technology B, Vol. 31, No. 1, p. 011203, Jan., 2013
32. Ogyun Seok, Woojin Ahn, Min-Koo Han, and Min-Woo Ha, “High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators”, Semiconductor Science and Technology, Vol. 28, No. 2, p. 025001, Feb., 2013
33. Min-Woo Ha, Min-Koo Han, and Cheol-Koo Hahn, “Effects of post oxidation on leakage current of high-voltage AlGaN/GaN Schottky barrier diodes on Si(111) substrate”, Solid-State Electronics, Vol. 81, p. 1-4, March, 2013
34. O. Seok, W. Ahn, M.-K. Han, and M.-W. Ha, “High-breakdown voltage and low on-resistance AlGaN/GaN on Si MOS-HEMTs employing an extended TaN gate on HfO2 gate insulator”, Electronics Letters, Vol. 49, No. 6, p. 425-427, March, 2013
35. Woojin Ahn, Ogyun Seok, Min-Woo Ha, Young-Shil Kim, and Min-Koo Han, “Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)”, ECS Transactions, Vol. 53, No. 2, p. 171-176, 2013
36. M.-W. Ha, O. Seok, W. Ahn, and M.-K. Han, “Surface Degradation of GaN after Thermal Processes”, ECS Transactions, Vol. 53, No. 2, p. 185-190, 2013
37. Ogyun Seok, Woojin Ahn, Min-Woo Ha, and Min-Koo Han, “RF-sputtered HfO2 Gate Insulator in High-Performance AlGaN/GaN MOS-HEMTs”, ECS Transactions, Vol. 53, No. 2, p. 191-196, 2013
38. S. Jandhyala, G. Mordi, D. Mao, M.-W. Ha, M. A. Quevedo-Lopez, B. E. Gnade, and J. Kim, “Graphene-ferroelectric hybrid devices for multi-valued memory system”, Applied Physics Letters, Vol. 103, p. 022903, July, 2013
39. Woojin Ahn, Ogyun Seok, Seung Min Song, Min-Koo Han, and Min-Woo Ha, “High-performance AlGaN/GaN high-electron-mobility transistors employing H2O annealing”, Journal of Crystal Growth, Vol. 378, p. 600-603, Sep., 2013
40. Minki Kim, Ogyun Seok, Min-Koo Han, and Min-Woo Ha, “High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiOx Passivation”, Journal of Electrical Engineering & Technology, Vol. 8, No. 5, p. 1157-1162, Sep., 2013
41. A. Y. Polyakov, N. B. Smirnov, Min-Woo Ha, Cheol-Koo Hahn, E. A. Kozhukhova, A. V. Govorkov, R. V. Ryzhuk, N. I. Kargin, Han-Su Cho, and In-Hwan Lee, “Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si”, Journal of Alloys and Compounds, Vol. 575, p. 17-23, Oct., 2013
42. Saungeun Park, Sangchul Lee, Greg Mordi, Srikar Jandhyla, Min-Woo Ha, Jang-Sik Lee, Luigi Colombo, Robert M. Wallace, Byoung Hun Lee, and Jiyoung Kim, “Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors”, IEEE Electron Device Letters, Vol. 35, No. 2, p. 277-279, Feb., 2014
43. Ogyun Seok, Min-Koo Han, Young-Chul Byun, Jiyoung Kim, Hyun-Chang Shin, and Min-Woo Ha, “High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment”, Solid-State Electronics, Vol. 103, p. 49-53, Jan., 2015
44. Ogyun Seok and Min-Woo Ha, “AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator”, Solid-State Electronics, Vol. 105, p. 1-5, March, 2015
45. Jie Huang, Antonio T. Lucero, Lanxia Cheng, Hyeon Jun Hwang, Min-Woo Ha, and Jiyoung Kim, “Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition”, Applied Physics Letters, Vol. 106, p. 123101, March, 2015
46. Min-Woo Ha, Kangmin Choi, Yoo Jin Jo, Hyun Soo Jin, and Tae Joo Park, “Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts”, Journal of Semiconductor Technology and Science, Vol. 16, No. 2, p. 179-184, April, 2016
47. Mingun Lee, Dongkyu Cha, Jie Huang, Min-Woo Ha, and Jiyoung Kim, “Fabrication of Single TiO2 Nanotube Devices With Pt Interconnections Using Electron and Ion Beam-assisted Deposition”, Japanese Journal of Applied Physics, Vol. 55, No. 6S1, p. 06GG11, June, 2016
48. Jie Huang, Mingun Lee, Antonio Lucero, Lanxia Cheng, Min-Woo Ha, and Jiyoung Kim, “7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO Thin Film Transistors”, Japanese Journal of Applied Physics, Vol. 55, No. 6S1, p. 06GK04, June, 2016
49. Yoo Jin Jo, Jeong Hyun Moon, Ogyun Seok, Wook Bahng, Tae Joo Park, and Min-Woo Ha, “Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2”, Journal of Semiconductor Technology and Science, Vol. 17, No. 2, p. 265-270, April, 2017
50. Dong-Won Kang, Hae Nyung Chang, and Min-Woo Ha, “Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage”, Japanese Journal of Applied Physics, Vol. 56, No. 6S1, p. 06GE09, June, 2017
51. Saemon Yoon, Min-Woo Ha, and Dong-Won Kang, “PCBM-blended chlorobenzene hybrid anti-solvent engineering for efficient planar perovskite solar cells”, Journal of Materials Chemistry C, Vol. 5, p. 10143-10151, No. 40, Oct., 2017
52. Suhyeong Lee, Yong Seok Kim, Hong Jeon Kang, Hyunwoo Kim, Min-Woo Ha, and Hyeong Joon Kim, “Effects of post-deposition annealing on sputtered SiO2/4H-SiC metal-oxide-semiconductor”, Solid-State Electronics, Vol. 139, p. 115-120, Jan., 2018
53. Ogyun Seok, Min-Woo Ha, In Ho Kang, Hyoung Woo Kim, Dong Young Kim, and Wook Bahng, “Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection well”, Japanese Journal of Applied Physics, Vol. 57, No. 6S1, p. 06HC07, June, 2018
54. Suhyeong Lee, Ji Min Kim, Changhyun Kim, Hyunwoo Kim, Hong Jeon Kang, Min-Woo Ha, and Hyeong Joon Kim, “Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing”, Ceramics International, Vol. 44, No. 12, p. 13565-13571, Aug. 2018
55. Xin Meng, Jaebeom Lee, Arul Ravichandran, Young-Chul Byun, Jae-Gil Lee, Antonio T. Lucero, Si Joon Kim, Min-Woo Ha, Chadwin D. Young, and Jiyoung Kim, “Robust SiNx/GaN MIS-HEMTs with crystalline interfacial layer using hollow cathode PEALD”, IEEE Electron Device Letters, Vol. 39, No. 8, p. 1195-1198, Aug. 2018
56. Yoo Jin Jo, Hyun Soo Jin, Min-Woo Ha, and Tae Joo Park, “Sulfur incorporation at interface between atomic-layer-deposited Al2O3 thin film and AlGaN/GaN heterostructure”, Electronic Materials Letters, Vol. 15, No. 2, p. 179-185, March 2019
57. Suhyeong Lee, Sungmin Kim, Hong Jeon Kang, Hyun Woo Kim, Ogyun Seok, Jeong Hyun Moon, Wook Bahng, Hyeong Joon Kim, and Min-Woo Ha, “Effect of sweeping direction on the capacitance-voltage behavior of sputtered SiO2/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing”, Physica Scripta, Vol. 94, No. 12, p. 125811, Dec. 2019
58. Ogyun Seok, Hyoung Woo Kim, In Ho Kang, Min-Woo Ha, and Wook Bahng, “Effects of junction profiles in bottom protection p-well on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs”, The European Physical Journal Applied Physics, Vol. 88, No. 3, p. 30103, Dec. 2019
59. Hojun Lee, Ogyun Seok, Taeeun Kim, and Min-Woo Ha, “Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications”, Electronics, Vol. 9, No. 2, p. 332, Feb. 2020
60. Byung-Gwan Lee, Seung-Il Shin, Min-Woo Ha, Geon-Hyoung An, “Sensible design of open-porous spherical architectures for hybrid supercapacitors with improved high-rate capability”, Current Applied Physics, Vol. 20, No. 3, p. 419-424, March 2020
61. Ogyun Seok, In Ho Kang, Jeong Hyun Moon, Hyoung Woo Kim, Min-Woo Ha, Wook Bahng, “Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide”, Microelectronic Engineering, Vol. 225, p. 111280, March 2020
62. Min-Woo Ha, Ogyun Seok, Hojun Lee, and Hyun Ho Lee, “Mobility models based on forward current-voltage characteristics of p-type pseudo-vertical diamond Schottky barrier diodes”, Micromachines, Vol. 11, No. 6, p. 598, June 2020
63. Kyoungmin Woo, Wonkyu Kang, Kyungmin Lee, Pilwoo Lee, Yoonjae Kim, Tae-Sik Yoon, Chu-Young Cho, Kyung-Ho Park, Min-Woo Ha, Hyun Ho Lee, “Enhancement of cortisol measurement sensitivity by laser illumination for AlGaN/GaN transistor biosensor”, Biosensors and Bioelectronics, Vol. 159, p. 112186, July 2020
64. Jeong Hyun Moon, In Ho Kang, Hyoung Woo Kim, Ogyun Seok, Wook Bahng, and Min-Woo Ha, “TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H-SiC MOSFETs using nitric oxide post-deposition annealing”, Current Applied Physics, Vol. 20, No. 12, p. 1386-1390, Dec. 2020
65. You-Cheol Jang, Soo-Seong Kim, Min-Woo Ha, and Yong-Sang Kim, “Accelerated Degradation of IGBTs due to High Gate Voltage at Various Temperature Environments”, IEEE Transactions on Devices and Materials Reliability, Vol. 20, No. 4, p. 731-736, Dec. 2020
66. Min-Woo Ha and Ogyun Seok, “Multi-floating-zone JTE for 4.5 kV SiC power devices with exponentially modulated dimensions”, Japanese Journal of Applied Physics, Vol. 60, No. SC, p. SCCE01, 2021
67. Ogyun Seok and Min-Woo Ha, “Effects of incomplete ionization on forward current-voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation”, Japanese Journal of Applied Physics, Vol. 60, No. SC, p. SCCE08, 2021
68. Yeongeun Park, Hyowon Yoon, Chaeyun Kim, Gwangjae Kim, Gyuheok Kang, Oygun Seok, and Min-Woo Ha, “Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide”, Japanese Journal of Applied Physics, Vol. 62, No. 1, p. 011001, 2023
69. Hyowon Yoon, Jinhun Kim, Sangyeob Kim, Chaeyun Kim, Yeongeun Park, Soontak Kwon, Jaejin Song, Jeongyun Lee, Min-Woo Ha, and Ogyun Seok, “1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect”, Japanese Journal of Applied Physics, Vol. 62, No. 11, p. 114001, 2023
70. Taeeun Kim, Min Kee, Jung-Rag Yoon, Ogyun Seok, and Min-Woo Ha, “DC Electric field-induced aging effects of electrical characteristics on X7R multilayer ceramic capacitors for switching mode power supplies”, Vol. 20, No. 2, pp. 1103-1111, 2025
기타사항
학과 전공 동아리 SEMI 관련 문의있으면 이메일 연락 부탁함. 학부생 지원은 상황에 따라 다르며, 주 활동은 학생이 공부하고 매주 ppt 발표해서 연습한 후 아이디어 내서 1저자로 국내학술대회 논문 작성임.